SiHFI644G-E3
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Краткое описание:
N-CH MOSFET 250V 7.9A TO-220 Full-Pak
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 250V drain-source voltage and 7.9A continuous drain current. This through-hole component is housed in a TO-220 Full-Pak package with a 3-pin configuration and tab. Key specifications include a maximum drain-source on-resistance of 280mΩ at 10V, typical gate charge of 68nC at 10V, and typical input capacitance of 1300pF at 25V. Maximum power dissipation is 40W, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 Full-Pak |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.83(Max) |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 16.12(Max) |
| Package Length (mm) | 10.63(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.62(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 68(Max)nC |
| Typical Gate Charge @ Vgs | 68(Max)@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 250V |
| Maximum Drain Source Resistance | 280@10VmOhm |
| Typical Input Capacitance @ Vds | 1300@25VpF |
| Maximum Continuous Drain Current | 7.9A |
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