SiHFI9540G-E3
Производится
Увеличить
Краткое описание:
P-CH MOSFET 100V 11A TO-220 Full-Pak TH
Дополнительная информация
P-channel power MOSFET featuring 100V drain-source voltage and 11A continuous drain current. This single-element enhancement mode transistor offers a low 200mΩ maximum drain-source resistance at 10V. Packaged in a TO-220 Full-Pak with through-hole mounting, it has a 3-pin configuration and a tab. Operating temperature range spans from -55°C to 175°C, with a maximum power dissipation of 48W.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TO-220 Full-Pak |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.83(Max) |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 16.12(Max) |
| Package Length (mm) | 10.63(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.62(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 48000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 61(Max)nC |
| Typical Gate Charge @ Vgs | 61(Max)@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Drain Source Resistance | 200@10VmOhm |
| Typical Input Capacitance @ Vds | 1400@24VpF |
| Maximum Continuous Drain Current | 11A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
