SiHFI9634G-E3

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SiHFI9634G-E3 - Vishay
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Краткое описание: P-CH MOSFET 250V 4.1A TO-220 TH
Производитель Vishay
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel enhancement mode power MOSFET featuring a 250V maximum drain-source voltage and 4.1A maximum continuous drain current. This single-element transistor offers a ±20V maximum gate-source voltage and a 4V maximum gate threshold voltage. Packaged in a TO-220 Full-Pak with through-hole mounting, it has a 3-pin configuration and a 2.54mm pin pitch. Key electrical characteristics include 1000mΩ maximum drain-source on-resistance at 10V, 38nC typical gate charge at 10V, 680pF typical input capacitance at 25V, and 170pF typical output capacitance. Maximum power dissipation is 35W, with an operating temperature range of -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code 18612
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case TO-220 Full-Pak
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.54
Basic Package Type Through Hole
Package Width (mm) 4.83(Max)
Package Description Transistor Outline Package Fullpak
Package Family Name TO-220
Package Height (mm) 16.12(Max)
Package Length (mm) 10.63(Max)
Radiation Hardening No
Seated Plane Height (mm) 19.62(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 35000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 38(Max)nC
Typical Gate Charge @ Vgs 38(Max)@10VnC
Typical Output Capacitance 170pF
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 250V
Maximum Gate Threshold Voltage 4V
Maximum Drain Source Resistance 1000@10VmOhm
Typical Input Capacitance @ Vds 680@25VpF
Maximum Continuous Drain Current 4.1A

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