SiHFL014T-E3
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Краткое описание:
N-CH MOSFET 60V 2.7A SOT-223 Surface Mount Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET in a SOT-223 (TO-261AA) surface-mount package. Features a maximum drain-source voltage of 60V and a continuous drain current of 2.7A. Offers a low drain-source on-resistance of 200mΩ at 10V gate-source voltage. Designed with a single dual drain configuration and gull-wing leads for lead-frame SMT mounting. Maximum power dissipation is 2000mW, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-261AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOT-223 |
| AEC Qualified | No |
| Configuration | Single Dual Drain |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.7(Max) |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT |
| Package Height (mm) | 1.8(Max) - 0.06 |
| Package Length (mm) | 6.7(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.8(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 11(Max)nC |
| Typical Gate Charge @ Vgs | 11(Max)@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 200@10VmOhm |
| Typical Input Capacitance @ Vds | 300@25VpF |
| Maximum Continuous Drain Current | 2.7A |
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