SiHFL210T-E3
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Краткое описание:
N-CH MOSFET 200V 0.96A SOT-223 Surface Mount Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET, SOT-223 package, featuring a 200V drain-source voltage and 0.96A continuous drain current. This surface-mount transistor offers a maximum drain-source on-resistance of 1500 mOhm at 10V, with a typical gate charge of 8.2 nC at 10V. The 4-pin SOT-223 package, also known as TO-261AA, has a plastic construction with gull-wing leads and a tab for enhanced thermal performance. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 2000 mW.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-261AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOT-223 |
| AEC Qualified | No |
| Configuration | Single Dual Drain |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.7(Max) |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT |
| Package Height (mm) | 1.8(Max) - 0.06 |
| Package Length (mm) | 6.7(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.8(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 8.2(Max)nC |
| Typical Gate Charge @ Vgs | 8.2(Max)@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Drain Source Resistance | 1500@10VmOhm |
| Typical Input Capacitance @ Vds | 140@25VpF |
| Maximum Continuous Drain Current | 0.96A |
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