SiHFL9110T-E3
Производится
Увеличить
Краткое описание:
P-CH MOSFET 100V 1.1A SOT-223 Surface Mount
Дополнительная информация
P-channel Power MOSFET, 100V drain-source voltage, 1.1A continuous drain current. Features a SOT-223 (TO-261AA) package with 4 pins (3+Tab) for surface mounting. Offers a maximum drain-source on-resistance of 1200 mOhm at 10V and a maximum power dissipation of 2000 mW. Operating temperature range from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-261AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | SOT-223 |
| AEC Qualified | No |
| Configuration | Single Dual Drain |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.7(Max) |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT |
| Package Height (mm) | 1.8(Max) - 0.061 |
| Package Length (mm) | 6.7(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.8(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 8.7(Max)nC |
| Typical Gate Charge @ Vgs | 8.7(Max)@10VnC |
| Typical Output Capacitance | 94pF |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 1200@10VmOhm |
| Typical Input Capacitance @ Vds | 200@25VpF |
| Maximum Continuous Drain Current | 1.1A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
