SiHFP140-E3

Производится
SiHFP140-E3 - Vishay
Увеличить
Краткое описание: N-CH Power MOSFET 100V 31A TO-247AC Through Hole
Производитель Vishay
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 31A continuous drain current. This single-element transistor offers a low 77mOhm drain-source resistance at 10V Vgs and a typical gate charge of 72nC. Packaged in a through-hole TO-247AC plastic housing with 3 pins and a tab, it supports a maximum power dissipation of 180W and operates from -55°C to 175°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-247AC
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code 18612
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-247AC
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 5.46
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 5.31(Max)
Package Description Transistor Outline Package
Package Family Name TO-247
Package Height (mm) 20.7(Max)
Package Length (mm) 15.87(Max)
Radiation Hardening No
Seated Plane Height (mm) 24.99(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 180000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 72(Max)nC
Typical Gate Charge @ Vgs 72(Max)@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 100V
Maximum Drain Source Resistance 77@10VmOhm
Typical Input Capacitance @ Vds 1700@25VpF
Maximum Continuous Drain Current 31A

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.