SiHFP23N50L

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SiHFP23N50L - Vishay
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Краткое описание: 500V 23A N-CH Power MOSFET TO-247AC
Производитель Vishay
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 500V drain-source voltage and 23A continuous drain current. This single-element transistor operates in enhancement mode with a maximum drain-source resistance of 235 mOhm at 10V. Packaged in a TO-247AC through-hole configuration with 3 pins and a tab, it offers a maximum power dissipation of 370W and operates between -55°C and 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-247AC
EU RoHS No
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code 18612
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-247AC
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 5.46
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 5.31(Max)
Package Description Transistor Outline Package
Package Family Name TO-247
Package Height (mm) 20.82(Max)
Package Length (mm) 15.87(Max)
Radiation Hardening No
Seated Plane Height (mm) 25.11(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 370000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 150(Max)nC
Typical Gate Charge @ Vgs 150(Max)@10VnC
Maximum Gate Source Voltage ±30V
Number of Elements per Chip 1
Maximum Drain Source Voltage 500V
Maximum Drain Source Resistance 235@10VmOhm
Typical Input Capacitance @ Vds 3600@25VpF
Maximum Continuous Drain Current 23A

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