SiHFP9240-E3

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SiHFP9240-E3 - Vishay
Краткое описание: P-CH MOSFET 200V 12A TO-247AC Through Hole Power Transistor
Производитель Vishay
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel Power MOSFET featuring a 200V maximum drain-source voltage and 12A maximum continuous drain current. This through-hole mounted component is housed in a TO-247AC package with 3 pins and a tab. It offers a maximum drain-source on-resistance of 500 mOhm at 10V and a maximum power dissipation of 150W. Operating temperature range spans from -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-247AC
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code 18612
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case TO-247AC
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 5.46
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 5.31(Max)
Package Description Transistor Outline Package
Package Family Name TO-247
Package Height (mm) 20.82(Max)
Package Length (mm) 15.87(Max)
Radiation Hardening No
Seated Plane Height (mm) 25.11(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 150000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 44(Max)nC
Typical Gate Charge @ Vgs 44(Max)@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 200V
Maximum Drain Source Resistance 500@10VmOhm
Typical Input Capacitance @ Vds 1200@25VpF
Maximum Continuous Drain Current 12A

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