SiHFPC50A-E3
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Краткое описание:
N-CH MOSFET 600V 11A TO-247AC Power Transistor
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. This single-element enhancement mode transistor is housed in a TO-247AC package with 3 through-hole pins and a tab. Key specifications include a maximum drain-source resistance of 580 mOhm at 10V, typical gate charge of 70 nC at 10V, and typical input capacitance of 2100 pF at 25V. Maximum power dissipation is 180W, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-247AC |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-247AC |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 5.46 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.31(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-247 |
| Package Height (mm) | 20.82(Max) |
| Package Length (mm) | 15.87(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 25.11(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 180000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 70(Max)nC |
| Typical Gate Charge @ Vgs | 70(Max)@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Drain Source Resistance | 580@10VmOhm |
| Typical Input Capacitance @ Vds | 2100@25VpF |
| Maximum Continuous Drain Current | 11A |
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