SiHFPS40N50L-E3
Производится
Увеличить
Краткое описание:
500V 46A N-CH Power MOSFET, Super-247, TO-274AA
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source voltage and 46A continuous drain current. This single-element transistor operates in enhancement mode with a maximum drain-source on-resistance of 100mΩ at 10V. Housed in a 3-pin Super-247 package (TO-274AA) with through-hole mounting, it offers a maximum power dissipation of 540W and operates across a temperature range of -55°C to 150°C. Typical gate charge is 380nC at 10V, with input capacitance at 8110pF (25V).
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-274AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | Super-247 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 5.45 |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.3(Max) |
| Package Family Name | TO-274-AA |
| Package Height (mm) | 20.8(Max) |
| Package Length (mm) | 16.1(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 540000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 380(Max)nC |
| Typical Gate Charge @ Vgs | 380(Max)@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Drain Source Resistance | 100@10VmOhm |
| Typical Input Capacitance @ Vds | 8110@25VpF |
| Maximum Continuous Drain Current | 46A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
