SiHFR1N60ATR-E3
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Краткое описание:
600V 1.4A N-CH Power MOSFET, DPAK, TO-252
Дополнительная информация
N-channel enhancement mode power MOSFET in a TO-252 DPAK surface-mount package. Features a maximum drain-source voltage of 600V and a continuous drain current of 1.4A. This single-element transistor offers a maximum gate-source voltage of ±30V and a gate threshold voltage of 4V. The DPAK package, measuring 6.73mm(Max) x 6.22mm(Max) x 2.38mm(Max), supports surface mounting and has a pin pitch of 2.28mm. Maximum power dissipation is 36000mW, with an operating temperature range of -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 2.28 |
| Package Material | Plastic |
| Package Weight (g) | 0.3 |
| Package Width (mm) | 6.22(Max) |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.38(Max) |
| Package Length (mm) | 6.73(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 2.52(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 36000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 14(Max)nC |
| Typical Gate Charge @ Vgs | 14(Max)@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 7000@10VmOhm |
| Typical Input Capacitance @ Vds | 229@25VpF |
| Maximum Continuous Drain Current | 1.4A |
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