SiHFR214TL-E3
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Краткое описание:
N-CH Power MOSFET 250V 2.2A DPAK TO-252 3-Pin SM
Дополнительная информация
N-channel enhancement mode power MOSFET in a TO-252 DPAK surface-mount package. Features a maximum drain-source voltage of 250V and a continuous drain current of 2.2A. Offers a low gate threshold voltage of 4V and a maximum drain-source on-resistance of 2000 mOhm at 10V. Designed for efficient power switching with a maximum power dissipation of 2500mW and an operating temperature range of -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 2.28 |
| Package Material | Plastic |
| Package Weight (g) | 0.3 |
| Package Width (mm) | 6.22(Max) |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.38(Max) |
| Package Length (mm) | 6.73(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 2.52(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 8.2(Max)nC |
| Typical Gate Charge @ Vgs | 8.2(Max)@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 250V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 2000@10VmOhm |
| Typical Input Capacitance @ Vds | 140@25VpF |
| Maximum Continuous Drain Current | 2.2A |
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