SiHFR430ATL-E3

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SiHFR430ATL-E3 - Vishay
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Краткое описание: N-CH Power MOSFET 500V 5A DPAK Surface Mount
Производитель Vishay
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET, 500V drain-source voltage, 5A continuous drain current. Features a TO-252AA DPAK surface-mount package with 3 pins and a tab. Maximum gate-source voltage is ±30V, with a gate threshold voltage of 4.5V. Operating temperature range from -55°C to 150°C.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-252AA
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code 18612
Pin Count 3
Automotive No
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case DPAK
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU
Pin Pitch (mm) 2.28
Package Material Plastic
Package Weight (g) 0.3
Package Width (mm) 6.22(Max)
Package Description Deca Watt Package
Package Family Name TO-252
Package Height (mm) 2.38(Max)
Package Length (mm) 6.73(Max)
Radiation Hardening No
Seated Plane Height (mm) 2.52(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 110000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 24(Max)nC
Typical Gate Charge @ Vgs 24(Max)@10VnC
Maximum Gate Source Voltage ±30V
Number of Elements per Chip 1
Maximum Drain Source Voltage 500V
Maximum Gate Threshold Voltage 4.5V
Maximum Drain Source Resistance 1700@10VmOhm
Typical Input Capacitance @ Vds 750@1VpF
Maximum Continuous Drain Current 5A

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