SiHFR430ATR

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SiHFR430ATR - Vishay
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Краткое описание: N-CH Power MOSFET 500V 5A DPAK TO-252 Surface Mount
Производитель Vishay
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET, 500V drain-source voltage, 5A continuous drain current. Features 1700mOhm maximum drain-source resistance at 10V Vgs, 24nC typical gate charge, and 750pF typical input capacitance. Encased in a surface-mount DPAK (TO-252AA) package with 3 pins, measuring 6.73mm max length, 6.22mm max width, and 2.38mm max height. Operates from -55°C to 150°C with a maximum power dissipation of 110W.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-252AA
EU RoHS No
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code 18612
Pin Count 3
Automotive No
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case DPAK
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.28
Package Material Plastic
Package Weight (g) 0.3
Package Width (mm) 6.22(Max)
Package Description Deca Watt Package
Package Family Name TO-252
Package Height (mm) 2.38(Max)
Package Length (mm) 6.73(Max)
Radiation Hardening No
Seated Plane Height (mm) 2.52(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 110000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 24(Max)nC
Typical Gate Charge @ Vgs 24(Max)@10VnC
Maximum Gate Source Voltage ±30V
Number of Elements per Chip 1
Maximum Drain Source Voltage 500V
Maximum Drain Source Resistance 1700@10VmOhm
Typical Input Capacitance @ Vds 750@1VpF
Maximum Continuous Drain Current 5A

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