SiHFR9310TR-E3

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SiHFR9310TR-E3 - Vishay
Краткое описание: P-CH MOSFET 400V 1.8A Si DPAK Surface Mount
Производитель Vishay
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel Power MOSFET, surface mount, in a TO-252 DPAK package. Features 400V drain-source voltage, 1.8A continuous drain current, and ±20V gate-source voltage. This single-element silicon transistor offers a maximum gate threshold voltage of 4V and a maximum drain-source resistance of 7000 mOhm at 10V. The DPAK package is constructed from plastic, measures 6.73mm(Max) x 6.22mm(Max) x 2.38mm(Max), and supports surface mounting. Operating temperature range is -55°C to 150°C.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-252AA
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code 18612
Pin Count 3
Automotive No
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case DPAK
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.28
Package Material Plastic
Package Weight (g) 0.3
Package Width (mm) 6.22(Max)
Package Description Deca Watt Package
Package Family Name TO-252
Package Height (mm) 2.38(Max)
Package Length (mm) 6.73(Max)
Radiation Hardening No
Seated Plane Height (mm) 2.52(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 50000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 13(Max)nC
Typical Gate Charge @ Vgs 13(Max)@10VnC
Typical Output Capacitance 50pF
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 400V
Maximum Gate Threshold Voltage 4V
Maximum Drain Source Resistance 7000@10VmOhm
Typical Input Capacitance @ Vds 270@25VpF
Maximum Continuous Drain Current 1.8A