SiHFS11N50ATL
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Краткое описание:
500V 11A N-CH Power MOSFET D2PAK TO-263
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 11A continuous drain current. This single-element transistor is housed in a TO-263AB D2PAK surface-mount package with gull-wing leads, offering a maximum drain-source on-resistance of 520 mOhm at 10V. Key specifications include a typical gate charge of 52 nC and input capacitance of 1423 pF, with a maximum power dissipation of 170W. Operating temperature range is -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-263AB |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D2PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 9.65(Max) |
| Package Description | Double Deca Watt Package |
| Package Family Name | TO-263 |
| Package Height (mm) | 4.83(Max) |
| Package Length (mm) | 10.41(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 4.83(Max) + 0.25 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 170000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 52(Max)nC |
| Typical Gate Charge @ Vgs | 52(Max)@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Drain Source Resistance | 520@10VmOhm |
| Typical Input Capacitance @ Vds | 1423@25VpF |
| Maximum Continuous Drain Current | 11A |
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