SiHFS9N60ATL-E3
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Краткое описание:
600V 9.2A N-CH Power MOSFET D2PAK TO-263 SMT
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 9.2A continuous drain current. This single-element transistor is housed in a D2PAK (TO-263AB) surface-mount package with gull-wing leads, offering a maximum power dissipation of 170W. Key electrical characteristics include a maximum drain-source on-resistance of 750mΩ at 10V and a typical gate charge of 49nC at 10V. The package dimensions are 10.41mm (L) x 9.65mm (W) x 4.83mm (H), with a 2.54mm pin pitch, suitable for lead-frame SMT mounting.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-263AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D2PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 9.65(Max) |
| Package Description | Double Deca Watt Package |
| Package Family Name | TO-263 |
| Package Height (mm) | 4.83(Max) |
| Package Length (mm) | 10.41(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 4.83(Max) + 0.25 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 170000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 49(Max)nC |
| Typical Gate Charge @ Vgs | 49(Max)@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Drain Source Resistance | 750@10VmOhm |
| Typical Input Capacitance @ Vds | 1400@25VpF |
| Maximum Continuous Drain Current | 9.2A |
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