SiHFU1N60A-E3
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Краткое описание:
600V 1.4A N-CH Power MOSFET TO-251AA Through Hole
Дополнительная информация
N-channel enhancement mode power MOSFET in a TO-251AA package. Features 600V maximum drain-source voltage and 1.4A continuous drain current. Offers 7000 mOhm maximum drain-source resistance at 10V gate-source voltage. Through-hole mounting with a 3-pin configuration and tab. Operates from -55°C to 150°C with a maximum power dissipation of 36W.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-251AA |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.29 |
| Package Width (mm) | 2.39(Max) |
| Package Height (mm) | 6.22(Max) |
| Package Length (mm) | 6.73(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 36000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 14(Max)nC |
| Typical Gate Charge @ Vgs | 14(Max)@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 7000@10VmOhm |
| Typical Input Capacitance @ Vds | 229@25VpF |
| Maximum Continuous Drain Current | 1.4A |
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