SiHG22N60S-E3
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Краткое описание:
600V 22A N-CH Power MOSFET TO-247AC Through Hole
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source voltage and 22A continuous drain current. This single-element transistor operates in enhancement mode with a maximum gate threshold voltage of 4V. Housed in a TO-247AC package, it offers a low drain-source on-resistance of 190mOhm at 10V. The through-hole component has a 3-pin configuration with a tab, suitable for mounting in a TO-247 package family.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-247AC |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-247AC |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 5.46 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.31(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-247 |
| Package Height (mm) | 20.82(Max) |
| Package Length (mm) | 15.87(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 25.11(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 250000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 75nC |
| Typical Gate Charge @ Vgs | 75@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 190@10VmOhm |
| Typical Input Capacitance @ Vds | 2810@25VpF |
| Maximum Continuous Drain Current | 22A |
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