SiHG25N40D-GE3

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SiHG25N40D-GE3 - Vishay(Siliconix)
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Краткое описание: MOSFET N-Ch 400V 25A 170mR TO-247AC Through Hole
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-Channel Power MOSFET featuring 400V drain-source voltage and 25A continuous drain current. Offers low 170mΩ drain-source resistance at 10V gate-source voltage. Designed for through-hole mounting in a TO-247AC package, this component boasts a maximum power dissipation of 278W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 21ns turn-on delay and 37ns fall time.
RoHS Compliant
Mount Through Hole
Width 5.31mm
Height 20.82mm
Length 15.87mm
Weight 1.340411oz
Polarity N-CHANNEL
Fall Time 37ns
Packaging Rail/Tube
Rds On Max 170mR
Package/Case TO-247AC
RoHS Compliant Yes
Package Quantity 500
Input Capacitance 1.707nF
Threshold Voltage 3V
Number of Channels 1
Turn-On Delay Time 21ns
Radiation Hardening No
Turn-Off Delay Time 40ns
Reach SVHC Compliant Unknown
Max Power Dissipation 278W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 170mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 25A
Drain to Source Voltage (Vdss) 400V

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