SiHG460B-GE3
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Краткое описание:
N-Ch MOSFET 500V 20A 250mR Through Hole TO-247AC
Дополнительная информация
N-channel MOSFET with 500V drain-source voltage and 20A continuous drain current. Features 250mOhm drain-source resistance at 10V gate-source voltage. Operates with a 2V threshold voltage and offers fast switching with turn-on delay of 24ns and fall time of 56ns. Housed in a TO-247AC package for through-hole mounting, this RoHS compliant component supports a maximum power dissipation of 278W and operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.31mm |
| Height | 20.82mm |
| Length | 15.87mm |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 56ns |
| Packaging | Bulk |
| Rds On Max | 250mR |
| Package/Case | TO-247AC |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 3.094nF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 24ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 117ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 278W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 500V |
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