SiHL620
Производится
Краткое описание:
200V 5.2A N-CH MOSFET TO-220AB Through Hole Power Transistor
Дополнительная информация
N-channel Power MOSFET, 200V drain-source voltage, 5.2A continuous drain current. Features 800mOhm maximum drain-source resistance at 5V, 16nC typical gate charge at 5V, and 360pF typical input capacitance at 25V. Housed in a TO-220AB package with 3 through-hole pins and a tab, this single-element transistor offers 50W maximum power dissipation and operates from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-220AB |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.67(Max) |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.65(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.01(Max) |
| Package Length (mm) | 10.51(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.14(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 16(Max)@5VnC |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Drain Source Resistance | 800@5VmOhm |
| Typical Input Capacitance @ Vds | 360@25VpF |
| Maximum Continuous Drain Current | 5.2A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
