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Краткое описание:
N-CH MOSFET 200V 4A TO-220 Full-Pak TH
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 200V drain-source voltage and 4A continuous drain current. This single-element transistor is housed in a TO-220 Full-Pak through-hole package with 3 pins and a tab. Key specifications include a maximum drain-source resistance of 800 mOhm at 5V, typical gate charge of 16 nC at 10V, and typical input capacitance of 360 pF at 25V. Maximum power dissipation is 30W, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 Full-Pak |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.83(Max) |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 16.12(Max) |
| Package Length (mm) | 10.63(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.62(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 30000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 16(Max)nC |
| Typical Gate Charge @ Vgs | 16(Max)@10VnC |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Drain Source Resistance | 800@5VmOhm |
| Typical Input Capacitance @ Vds | 360@25VpF |
| Maximum Continuous Drain Current | 4A |
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