SiHLZ14-E3
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Краткое описание:
N-CH MOSFET 60V 10A TO-220AB Through Hole Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET designed for through-hole mounting. Features a 60V drain-source voltage, 10A continuous drain current, and low on-resistance of 200 mOhm at 5V gate-source voltage. Housed in a TO-220AB package with 3 pins and a tab, offering a maximum power dissipation of 43W. Operates across a wide temperature range from -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-220AB |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220AB |
| AEC Qualified | No |
| Configuration | Single |
| Pin Pitch (mm) | 2.67(Max) |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.7(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.01(Max) |
| Package Length (mm) | 10.41(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 43000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 8.4(Max)@5VnC |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 200@5VmOhm |
| Typical Input Capacitance @ Vds | 400@25VpF |
| Maximum Continuous Drain Current | 10A |
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