SiHP16N50C-E3
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Краткое описание:
500V 16A N-Channel MOSFET, TO-220, 250W
Дополнительная информация
N-channel power MOSFET featuring a 500V drain-source voltage (Vdss) and 16A continuous drain current (ID). This through-hole component offers a maximum power dissipation of 250W and a low on-resistance (Rds On Max) of 380mΩ. Operating across a wide temperature range from -55°C to 150°C, it exhibits fast switching characteristics with turn-on delay time of 27ns and fall time of 31ns. Packaged in a TO-220-3 case, this RoHS compliant device is suitable for demanding power applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 31ns |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.9nF |
| Power Dissipation | 250W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 310mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 500V |
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