SiHP5N50D-GE3
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Краткое описание:
N-CH MOSFET 500V 5.3A 1.5 Ohm TO-220
Дополнительная информация
N-CHANNEL MOSFET featuring 500V Drain to Source Voltage (Vdss) and 5.3A Continuous Drain Current (ID). Offers 1.5 Ohm Drain to Source Resistance (Rds On Max) at 10V. This through-hole component, packaged in TO-220-3, boasts a max power dissipation of 104W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 11ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.65mm |
| Height | 9.01mm |
| Length | 10.51mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.5R |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 325pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | 500V |
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