SiHU5N50D-GE3
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Краткое описание:
N-CH MOSFET 500V 5.3A 1.5R TO-251
Дополнительная информация
N-CHANNEL MOSFET with 500V Drain to Source Voltage (Vdss) and 5.3A Continuous Drain Current (ID). Features 1.5 Ohm Drain to Source Resistance (Rds On Max) at 10V. This through-hole component offers a 3V Threshold Voltage and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with 12ns Turn-On Delay Time and 14ns Turn-Off Delay Time. Packaged in TO-251-3, this RoHS compliant device has a Max Power Dissipation of 104W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.39mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Packaging | Rail/Tube |
| Rds On Max | 1.5R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 325pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | 500V |
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