SiRA84BDP
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Краткое описание:
30 V N-Channel Power MOSFET in PowerPAK SO-8
Дополнительная информация
This device is an N-channel 30 V power MOSFET built on Vishay Siliconix TrenchFET Gen IV technology. It is supplied in a PowerPAK SO-8 package and is intended for high power density DC/DC converters, synchronous rectification, and VRM or embedded DC/DC applications. The MOSFET provides up to 70 A continuous drain current at TC = 25 °C, with maximum on-resistance of 4.6 mΩ at 10 V gate drive and 7.1 mΩ at 4.5 V gate drive. It has typical total gate charge of 10.6 nC at 4.5 V drive, a maximum power dissipation of 36 W at TC = 25 °C, and an operating junction temperature range of -55 °C to +150 °C. The ordering information identifies the device as lead-free and halogen-free.
| Halogen-free | Yes |
| Lead (pb)-free | Yes |
| Transistor Type | N-Channel MOSFET |
| Gate-Source Voltage | +20/-16V |
| Drain-Source Voltage | 30V |
| Pulsed Drain Current | 150A |
| Input Capacitance Typ | 1050pF |
| Output Capacitance Typ | 390pF |
| On-Resistance Max @ VGS=10 V | 4.6mΩ |
| Power Dissipation (TC=25°C) | 36W |
| On-Resistance Max @ VGS=4.5 V | 7.1mΩ |
| Single Pulse Avalanche Energy | 11.3mJ |
| Reverse Transfer Capacitance Typ | 80pF |
| Total Gate Charge Typ @ VGS=4.5 V | 10.6nC |
| Continuous Drain Current (TA=25°C) | 22A |
| Continuous Drain Current (TC=25°C) | 70A |
| Body Diode Reverse Recovery Time Max | 40ns |
| Operating Junction Temperature Range | -55 to +150°C |
| Junction-to-Case Thermal Resistance Max | 3.5°C/W |
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