SiS454DN
Краткое описание:
20 V N-Channel TrenchFET Power MOSFET, PowerPAK 1212-8
Дополнительная информация
This N-channel trench power MOSFET is rated for 20 V drain-source operation and is housed in a compact PowerPAK 1212-8 package. It offers low on-resistance of 3.7 mOhm at 10 V gate drive and 5.4 mOhm at 4.5 V, with continuous drain current up to 35 A at a 25 °C case temperature. Total gate charge is 18.5 nC typical at 4.5 V, supporting efficient switching in notebook and point-of-load DC/DC converters. The device is RoHS-compliant, halogen-free, and specified for operation from -55 °C to 150 °C.
| RoHS | Compliant |
| Lead-free | Yes |
| Channel Type | N-Channel |
| Halogen-free | Yes |
| On-Resistance | 5.4 at VGS = 4.5 VmOhm |
| Avalanche Energy | 45mJ |
| Input Capacitance | 1900pF |
| Power Dissipation | 52W |
| Total Gate Charge | 18.5 typ at VGS = 4.5 VnC |
| Output Capacitance | 630pF |
| Gate-Source Voltage | ±20V |
| Drain-Source Voltage | 20V |
| Pulsed Drain Current | 100A |
| Continuous Drain Current | 35A |
| Reverse Transfer Capacitance | 390pF |
| Operating Junction Temperature Max | 150°C |
| Operating Junction Temperature Min | -55°C |
| Thermal Resistance Junction-to-Case | 2.4 max°C/W |
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