T1070P-SD-F

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T1070P-SD-F - Vishay(Semiconductors)
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Краткое описание: NPN Phototransistor Chip, 570nm Peak Wavelength, 1.5V Emitter-Collector Voltage
Производитель Vishay(Semiconductors)
Статус производства Производится (ACTIVE)

Дополнительная информация

The T1070P-SD-F is a phototransistor chip from Vishay, featuring a peak wavelength of 570nm and maximum emitter-collector voltage of 1.5V. It operates within a temperature range of -40°C to 100°C and has a half intensity angle of 120 degrees. The device is fabricated using NPN transistor technology and has a maximum collector current of 20mA. It is designed for top-view applications and has a maximum light current of 50mA.
ECCN EAR99
PPAP No
Type Chip
HTS Code 8541407080
Polarity NPN
Cage Code 18612
Automotive No
Lens Color Black
Schedule B 8541407080
AEC Qualified No
Lens Shape Type Flat
Peak Wavelength 570nm
Radiation Hardening No
Viewing Orientation Top View
Maximum Dark Current 50nA
Phototransistor Type Phototransistor
Maximum Light Current 50uA
Fabrication Technology NPN Transistor
Max Operating Temperature 100°C
Maximum Collector Current 20mA
Min Operating Temperature -40°C
Number of Channels per Chip 1
Half Intensity Angle Degrees 120°
Maximum Collector-Emitter Voltage 6V
Maximum Emitter-Collector Voltage 1.5V

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