TD62002AP(J)

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TD62002AP(J) - Toshiba
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Краткое описание: NPN Darlington Array Transistor, 50V, 0.5A, 16-Pin PDIP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Darlington transistor array featuring seven elements in a 16-pin PDIP through-hole package. This semiconductor component offers a maximum collector-emitter voltage of 50V and a continuous DC collector current of 0.5A, with a maximum power dissipation of 1470mW. Key specifications include a minimum DC current gain of 1000 at 350mA/2V and a maximum collector-emitter saturation voltage of 1.1V at 250uA/100mA. Operating temperature range is from -40°C to 85°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN
Jedec MS-001BB
Mounting Through Hole
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Array 7
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 19.75(Max)
Radiation Hardening No
Minimum DC Current Gain 1000@350mA@2V
Seated Plane Height (mm) 4.15
Max Operating Temperature 85°C
Maximum Power Dissipation 1470mW
Min Operating Temperature -40°C
Number of Elements per Chip 7
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 0.5A
Maximum Collector-Emitter Saturation Voltage 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mAV

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