TD62503F(5,ND,ELP)

Снят с производства
TD62503F(5,ND,ELP) - Toshiba
Краткое описание: NPN BRT Transistor Array 35V 200mA 16-Pin SOP SMT
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Digital Transistor, NPN, 35V, 200mA, 16-Pin SOP. Features an NPN bipolar junction transistor array with 7 configurations, a maximum collector-emitter voltage of 35V, and a continuous DC collector current of 200mA. Surface mountable in a plastic small outline package (SOP) with gull-wing leads, offering a maximum power dissipation of 625mW. Includes a typical input resistor of 2.7 kOhm and a minimum DC current gain of 50. Operates within a temperature range of -40°C to 85°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN
Mounting Surface Mount
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case SOP
AEC Qualified No
Configuration Array 7
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.18
Package Width (mm) 4.4
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 10.5(Max)
Radiation Hardening No
Typical Input Resistor 2.7kOhm
Typical Resistor Ratio 0.27
Minimum DC Current Gain 50@10mA@10V
Max Operating Temperature 85°C
Maximum Power Dissipation 625mW
Min Operating Temperature -40°C
Maximum Collector-Emitter Voltage 35V
Maximum Continuous DC Collector Current 200mA
Maximum Collector-Emitter Saturation Voltage 0.2@1mA@10mA|0.8@3mA@150mAV

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