TD62503FNG(O,EL,HZ

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TD62503FNG(O,EL,HZ - Toshiba
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Краткое описание: NPN Digital Transistor Array 35V 200mA 780mW 16-Pin SSOP SMT
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Digital Transistor Array (BRT) featuring NPN bipolar junction transistor technology. Offers a maximum collector-emitter voltage of 35V and a continuous DC collector current of 200mA, with a maximum power dissipation of 780mW. Housed in a 16-pin SSOP (Shrink Small Outline Package) with gull-wing leads for surface mount applications. Includes a typical input resistor of 2.7 kOhm and a resistor ratio of 0.27, operating within a temperature range of -40°C to 85°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Mounting Surface Mount
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case SSOP
AEC Qualified No
Configuration Array 7
RoHS Versions 2002/95/EC
Pin Pitch (mm) 1
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.6
Package Description Shrink Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 8.7(Max)
Radiation Hardening No
Typical Input Resistor 2.7kOhm
Typical Resistor Ratio 0.27
Minimum DC Current Gain 50@10mA@10V
Seated Plane Height (mm) 1.9(Max)
Max Operating Temperature 85°C
Maximum Power Dissipation 780mW
Min Operating Temperature -40°C
Maximum Collector-Emitter Voltage 35V
Maximum Continuous DC Collector Current 200mA
Maximum Collector-Emitter Saturation Voltage 0.2@1mA@10mA|0.8@3mA@150mAV

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