TD62503P(F,J)

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TD62503P(F,J) - Toshiba
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Краткое описание: NPN Digital Transistor Array 35V 200mA 16-Pin PDIP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Digital Transistor Array with 7 configurations, featuring a 35V maximum collector-emitter voltage and 200mA maximum continuous DC collector current. This through-hole component is housed in a 16-pin PDIP package with a 2.54mm pin pitch. It offers a typical input resistor of 2.7 kOhm and a maximum power dissipation of 1000mW, operating within a temperature range of -40°C to 85°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN
Jedec MS-001BB
EU RoHS Yes
Mounting Through Hole
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Array 7
RoHS Versions 2002/95/EC
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 19.75(Max)
Radiation Hardening No
Typical Input Resistor 2.7kOhm
Typical Resistor Ratio 0.27
Minimum DC Current Gain 50@10mA@10V
Seated Plane Height (mm) 4.15
Max Operating Temperature 85°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -40°C
Maximum Collector-Emitter Voltage 35V
Maximum Continuous DC Collector Current 200mA
Maximum Collector-Emitter Saturation Voltage 0.2@1mA@10mA|0.8@3mA@150mAV

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