TD62506P(5,J,APN)

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TD62506P(5,J,APN) - Toshiba
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Краткое описание: NPN BRT Array 35V 200mA 16-Pin PDIP Transistor
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN digital transistor array featuring 7 configurations, designed for through-hole mounting in a 16-pin PDIP package. This component offers a maximum collector-emitter voltage of 35V and a continuous DC collector current of 200mA, with a maximum power dissipation of 1000mW. Key electrical specifications include a typical input resistor of 2.7 kOhm and a minimum DC current gain of 70. Operating temperature range spans from -40°C to 85°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN
Jedec MS-001BB
Mounting Through Hole
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Array 7
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 19.75(Max)
Radiation Hardening No
Typical Input Resistor 2.7kOhm
Minimum DC Current Gain 70@10mA@10V
Seated Plane Height (mm) 4.15
Max Operating Temperature 85°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -40°C
Maximum Collector-Emitter Voltage 35V
Maximum Continuous DC Collector Current 200mA
Maximum Collector-Emitter Saturation Voltage 0.2@1mA@10mA|0.8@3mA@150mAV

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