TD62553S(ND)

Снят с производства
TD62553S(ND) - Toshiba
Увеличить
Краткое описание: NPN BRT Transistor, 25V 150mA, 9-Pin SIP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Digital Transistor, Quad Common Emitter configuration, featuring a 25V maximum collector-emitter voltage and 150mA maximum continuous DC collector current. This through-hole component is housed in a 9-pin Single In Line Package (SIP) with a 2.54mm pin pitch. Maximum power dissipation is 750mW, with a typical input resistor of 2.7 kOhm and a minimum DC current gain of 60. Operating temperature range is -40°C to 85°C.
PCB 9
ECCN EAR99
PPAP No
Type NPN
Mounting Through Hole
Cage Code S0562
Pin Count 9
Automotive No
Lead Shape Through Hole
Schedule B 8541210080
Package/Case SIP
AEC Qualified No
Configuration Quad Common Emitter
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 3.2
Package Description Single In Line Package
Package Family Name SIP
Package Height (mm) 5.6
Package Length (mm) 22.78(Max)
Radiation Hardening No
Typical Input Resistor 2.7kOhm
Typical Resistor Ratio 0.135
Minimum DC Current Gain 60@10mA@5V
Seated Plane Height (mm) 7.9(Max)
Max Operating Temperature 85°C
Maximum Power Dissipation 750mW
Min Operating Temperature -40°C
Maximum Collector-Emitter Voltage 25V
Maximum Continuous DC Collector Current 150mA

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.