TD62553S(STA)

Снят с производства
TD62553S(STA) - Toshiba
Краткое описание: NPN Digital Transistor 25V 150mA 9-Pin SIP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN digital bipolar junction transistor (BJT) featuring a quad common emitter configuration. Designed for through-hole mounting, this component is housed in a 9-pin Single In Line Package (SIP) with a 2.54mm pin pitch. It offers a maximum collector-emitter voltage of 25V and a maximum continuous DC collector current of 150mA, with a maximum power dissipation of 750mW. Key internal specifications include a typical input resistor of 2.7 kOhm and a minimum DC current gain of 60. Operating temperature range spans from -40°C to 85°C.
PCB 9
ECCN EAR99
PPAP No
Type NPN
Mounting Through Hole
Cage Code S0562
Pin Count 9
Automotive No
Lead Shape Through Hole
Schedule B 8541210080
Package/Case SIP
AEC Qualified No
Configuration Quad Common Emitter
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 3.2
Package Description Single In Line Package
Package Family Name SIP
Package Height (mm) 5.6
Package Length (mm) 22.78(Max)
Radiation Hardening No
Typical Input Resistor 2.7kOhm
Typical Resistor Ratio 0.135
Minimum DC Current Gain 60@10mA@5V
Seated Plane Height (mm) 7.9(Max)
Max Operating Temperature 85°C
Maximum Power Dissipation 750mW
Min Operating Temperature -40°C
Maximum Collector-Emitter Voltage 25V
Maximum Continuous DC Collector Current 150mA

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