TEFT4300
Производится
Увеличить
Краткое описание:
NPN Phototransistor, 70V, 925nm, 50mA, Through Hole
Дополнительная информация
NPN phototransistor with a 925nm wavelength, designed for through-hole mounting in a T-1 package. Features a 70V collector-emitter breakdown voltage and a maximum collector current of 50mA. This silicon optical sensor offers a 2.3µs fall time and operates within a temperature range of -40°C to 100°C, with a maximum power dissipation of 100mW. The domed lens provides a 30° viewing angle.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.9mm |
| Height | 4.5mm |
| Length | 3.2mm |
| Polarity | NPN |
| Fall Time | 2.3us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 925nm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 30° |
| RoHS Compliant | Yes |
| Package Quantity | 5000 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 50mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 300mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
