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Краткое описание:
NPN Phototransistor, 70V, 50mA, 880nm, SMD
Дополнительная информация
NPN Silicon Phototransistor, 880nm wavelength, 70V Collector-Emitter Breakdown Voltage, 50mA Max Collector Current, and 100mW Max Power Dissipation. Features a 2-pin SMD/SMT package with a domed lens, suitable for surface mount applications. Operating temperature range from -40°C to 85°C, with a 2.3µs fall time. Packaged in tape and reel for efficient assembly.
| RoHS | Compliant |
| Mount | Surface Mount, PCB |
| Width | 2mm |
| Height | 2.7mm |
| Length | 2.5mm |
| Polarity | NPN |
| Fall Time | 2.3us |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Lens Style | Domed |
| Wavelength | 880nm |
| Orientation | Top View |
| Output Power | 100mW |
| Package/Case | SMD/SMT |
| Viewing Angle | 15° |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Breakdown Voltage | 70V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 100mW |
| Operating Supply Current | 7mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 300mV |
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