TEMT7000X01
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Краткое описание:
NPN Phototransistor, 850nm IR, 20V VCEO, 20mA IC, 0805 SMD
Дополнительная информация
Surface mount NPN phototransistor for infrared detection, featuring an 850nm wavelength and a 60° viewing angle. This component offers a 20V collector-emitter breakdown voltage and a maximum collector current of 20mA. Encased in a 2012 (0805) SMD package, it operates within a temperature range of -40°C to 100°C with a maximum power dissipation of 100mW. Packaged in tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.85mm |
| Length | 2mm |
| Polarity | NPN |
| Packaging | Tape and Reel |
| Lens Style | Flat |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | 0805 |
| Viewing Angle | 60° |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Case Code (Metric) | 2012 |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Case Code (Imperial) | 0805 |
| Reach SVHC Compliant | Unknown |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 20mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
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