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NPN Darlington Transistor, 100V, 10A, 1000hFE, TO-220AB
Дополнительная информация
NPN Epitaxial Silicon Darlington Transistor, designed for through-hole mounting in a TO-220AB package. Features a 100V collector-emitter voltage (VCEO) and a 10A continuous collector current. Offers a minimum DC current gain (hFE) of 1000 and a maximum power dissipation of 80W. Operates across a wide temperature range from -65°C to 150°C. This component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.214g |
| hFE Min | 1000 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220AB |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 50 |
| Power Dissipation | 80W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 10A |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
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