TIP29C
Производится
Увеличить
Краткое описание:
NPN BJT 100V 1A TO-220 Transistor
Дополнительная информация
NPN bipolar junction transistor (BJT) in a TO-220 package, designed for general-purpose applications. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 100V. Offers a minimum DC current gain (hFE) of 15 and a maximum power dissipation of 2W. Operates within a temperature range of -65°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| hFE Min | 15 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220 |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 50 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 1A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 700mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
