TIP31ATU

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TIP31ATU - Onsemi
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Краткое описание: NPN BJT Transistor 60V 3A TO-220
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN bipolar junction transistor (BJT) in a TO-220 package, featuring a 60V collector-emitter breakdown voltage and a continuous collector current rating of 3A. This through-hole component offers a minimum DC current gain (hFE) of 10 and a transition frequency of 3MHz. Designed for operation between -65°C and 150°C, it has a maximum power dissipation of 2W and is lead-free and RoHS compliant.
RoHS Compliant
Mount Through Hole
hFE Min 10
Polarity NPN
Frequency 3MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Current Rating 3A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 50
Power Dissipation 2W
Number of Elements 1
Transition Frequency 3MHz
Max Collector Current 3A
Max Power Dissipation 2W
Gain Bandwidth Product 3MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 1.2V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V

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