TK100A06N1
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Краткое описание:
N-CH MOSFET 60V 263A TO-220SIS Power Si
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 263A continuous drain current. This single-element silicon transistor utilizes U-MOS VIII-H process technology and is housed in a 3-pin TO-220SIS through-hole package with a tab. Key specifications include a low drain-source on-resistance of 2.7mOhm at 10V, typical gate charge of 140nC at 10V, and typical input capacitance of 10500pF at 30V. Maximum power dissipation is 45000mW, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220SIS |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.5 |
| Process Technology | U-MOS VIII-H |
| Package Family Name | TO-220 |
| Package Height (mm) | 15 |
| Package Length (mm) | 10 |
| Seated Plane Height (mm) | 17 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 140nC |
| Typical Gate Charge @ Vgs | 140@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 2.7@10VmOhm |
| Typical Input Capacitance @ Vds | 10500@30VpF |
| Maximum Continuous Drain Current | 263A |
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