TK100A08N1,S4X

Производится
TK100A08N1,S4X - Toshiba
Краткое описание: N-Channel MOSFET TO-220-3 80V 100A 45W Through Hole
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK100A08N1,S4X is a TO-220-3 packaged N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 100A and a maximum power dissipation of 45W. The device features a drain to source resistance of 2.6mR and a gate to source voltage of 20V.
RoHS Compliant
Mount Through Hole
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 46ns
Packaging Rail/Tube
Rds On Max 3.2mR
Package/Case TO-220-3
Package Quantity 50
Input Capacitance 9nF
Number of Channels 1
Turn-On Delay Time 53ns
Radiation Hardening No
Turn-Off Delay Time 140ns
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.6mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Drain to Source Voltage (Vdss) 80V

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