TK100E06N1
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Краткое описание:
N-CH MOSFET 60V 263A TO-220 Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 263A continuous drain current. This single-element silicon transistor utilizes U-MOS VIII-H process technology and is housed in a 3-pin TO-220 package with a tab. Key specifications include a low drain-source on-resistance of 2.3mΩ at 10V and a maximum power dissipation of 255W. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.45 |
| Process Technology | U-MOS VIII-H |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 8.59 |
| Package Length (mm) | 10.16 |
| Seated Plane Height (mm) | 18.94 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 255000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 140nC |
| Typical Gate Charge @ Vgs | 140@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 2.3@10VmOhm |
| Typical Input Capacitance @ Vds | 10500@30VpF |
| Maximum Continuous Drain Current | 263A |
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