TK100L60W,VQ
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Краткое описание:
600V 100A N-CH MOSFET, 18mR Rds(on), 15nF Ciss, TO3P(L)
Дополнительная информация
N-channel power MOSFET designed for high-voltage applications, featuring a 600V drain-source voltage (Vdss) and a continuous drain current (ID) of 100A. This through-hole component offers a low drain-source on-resistance (Rds On) of 18mΩ at 100A, with a maximum power dissipation of 797W. It operates within a temperature range of -55°C to 150°C and includes input capacitance of 15nF. RoHS compliant and packaged in a TO3P(L) package.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | DTMOSIV |
| Polarity | N-CHANNEL |
| Fall Time | 125ns |
| Packaging | Rail/Tube |
| Rds On Max | 18mR |
| Resistance | 0.018R |
| Capacitance | 1.5E-08F |
| RoHS Compliant | Yes |
| Package Quantity | 100 |
| Input Capacitance | 15nF |
| Turn-Off Delay Time | 690ns |
| Max Power Dissipation | 797W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 600V |
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