TK14C65W,S1Q
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Краткое описание:
N-CHANNEL MOSFET 650V 13.7A 220mR 150°C TO-262-3
Дополнительная информация
The Toshiba TK14C65W,S1Q is a single N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 130W and a continuous drain current of 13.7A. The device features a drain to source resistance of 220mR and a gate to source voltage of 30V. It is packaged in a TO-262-3 package and is available in a through hole mount configuration.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.084199oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Packaging | Rail/Tube |
| Rds On Max | 250mR |
| Package/Case | TO-262-3 |
| Package Quantity | 50 |
| Input Capacitance | 1.3nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 60ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Max Power Dissipation | 130W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 220mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 13.7A |
| Drain to Source Voltage (Vdss) | 650V |
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