TK150F04K3(4LHLS,Q

Не рекомендуется для новых проектов
TK150F04K3(4LHLS,Q - Toshiba
Краткое описание: 40V 150A N-CH Power MOSFET, TO-220SM(W) SMT
Производитель Toshiba
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (LTB)

Дополнительная информация

N-channel enhancement mode power MOSFET, 40V drain-source voltage, 150A continuous drain current. Features U-MOS IV process technology for low on-resistance (2.1 mOhm @ 10V). Packaged in a surface-mount TO-220SM(W) with gull-wing leads, offering a 3-pin configuration. Operates from -55°C to 175°C with a maximum power dissipation of 300W.
PCB 2
Tab Tab
ECCN EAR99
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive Yes
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-220SM(W)
AEC Qualified Yes
Configuration Single
RoHS Versions 2002/95/EC
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 9
Process Technology U-MOS IV
Package Description Transistor Outline Package
Package Family Name TO-220
Package Height (mm) 3.5
Package Length (mm) 10
Seated Plane Height (mm) 3.6
Max Operating Temperature 175°C
Maximum Power Dissipation 300000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 166nC
Typical Gate Charge @ Vgs 166@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 40V
Maximum Gate Threshold Voltage 4V
Maximum Drain Source Resistance 2.1@10VmOhm
Typical Input Capacitance @ Vds 7500@10VpF
Maximum Continuous Drain Current 150A

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